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14th December 2010 - 02:07 AM
I'd like to make very thin layer on the Si wafer.
But it makes some problem.
The aluminum atom does not homogenously dispersed on the surface.
I think it seems inhomogeneous nucleation phenomena.
Any method to solve this problem?
24th December 2010 - 01:02 PM
Why are you trying to depost a layer of Al on Si? If you explain your objective it might help me understand better.
16th January 2011 - 06:03 PM
You may try to adjust the temperature of the silicon wafer.
The temperature allows the aluminium atoms to travel at the surface.
What's the deposition method? Evaporate under secondary vacuum aluminium from a crucible? CVD? Other?
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