hi, i would like to have some help with this problem:
Silicon is doped with 10^16 phosphorus atoms/cm^3.
At what temperature would the hole concentration be equal to 10% of the ionized impurity concentration?
I think I can use the equation for Nd+= Nd x e(-(Ef-Ed)/KT),
where Nd+ is the ionized donor concentration, Nd is the donor concentration, Ef the fermi level, Ed the donor energy.
I am not sure I am using the good equation, then I dont know how to find the Ef and Ed . i was not able to find or dont understand how to get the Ef and Ed.