guiding_light
12th April 2008 - 09:31 AM
Physica Status Solidi (a)
Volume 81, Issue 1 , Pages 323 - 332
Monte-Carlo Approach of Electron Emission from SiO2
mean escape depth of 16 nm for 4 eV electron above CB edge
gongii
19th April 2008 - 06:12 PM
There is a nice paper from Brown Boveri Research Center in Switzerland, from back in 1988.
"Experimental Determination of Energy Dependent Inelastic and Elastic Scattering Rates of Hot Electrons in Large Bandgap Insulators"
E. Cartier and P. Pfluger
Physica Scripta T23, 235-241 (1988)
It is old news that hot electrons with energies of few or several eV can go ~10 nm through insulators such as hydrocarbons or SiO2 without losing energy.
Oxides this thick were used for MOS and floating gates, and people still knew they could leak and tunnel.
guiding_light
20th April 2008 - 12:37 AM
QUOTE (gongii+Apr 19 2008, 06:12 PM)
It is old news that hot electrons with energies of few or several eV can go ~10 nm through insulators such as hydrocarbons or SiO2 without losing energy.
What is the energy loss per inelastic encounter roughly?
gongii
20th April 2008 - 11:21 AM
QUOTE
What is the energy loss per inelastic encounter roughly?
Do you have the paper?
The electrons interact most strongly with optical phonons, since they involve oscillating charge distributions. The energy is of order hundreds of meV or less than an eV.
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