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bryan ackers
Hello,

Does anyone know of a good etch for furnace silicon nitride? Iam not
concerned about selectivity
and do not want to use hot phosphoric acid.

Regards,

Bryan.
beyder
Brian,

You can use HF or BOE (buffered oxide etch). I am not sure what the actual rates are, but we take off about 1000A in 1hr.
You can also etch in CF4 RIE at about 30nm/min, I think

Arthur
zach
QUOTE
You can use HF or BOE (buffered oxide etch). I am not sure what the actual rates are, but we take off about 1000A in 1hr.


Eh? With HF, more like seconds...
Alex K.
QUOTE
Eh? With HF, more like seconds...


Yes. HF is etching SiN very poorly.
Once I have tried etching PECVD-SiN with HF. I always got some residuals on
the sample.
CF4 or some other F-containing plasmas should be the better choice.

Alex
bryan ackers
Hello Again,

I don't want to dry etch. From what I have read HF etches much faster
than BOE (1% HF 600A/min).
I will just give it a try and dilute down 48% at 40C to 50C.

Cheers,
Bryan.
kai
so, did you use the HF at last. if so, do you have good removal rate up there

thanks
Guest
Does anyone know how to control the profile of the nitride spacer (as in side of poly gate) by etch or other processing?

Thanks.
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