HF, Si3N4, Bonding *

JIAO Jiwei

16th April 2004 - 02:02 PM

Ole Sondergard

16th April 2004 - 02:05 PM

I don´t think that HF is nessesary. I would instead use a Pirahna dip
(3:1 conc. sulfuric acid : 30% hydrogenperoxide) 10 min or so. This
creates a lot of OH on the surfaces, and they makes a rater strong
prebonding when the wafers are put together, even at room temperature.
But remember the wafers have to be absolutely particle free before
bonding to yield an acceptable result, and this can be a real challenge.

-Fairy-

15th January 2012 - 12:09 PM

Hi,

I am currently working on dissimilar material bonding. Now we choose
LPCVD Si3N4 and thermally grown SiO2. Before the bonding, the wafers
have to be treated in different solutions to modify the surface states.
So questions:
1)What's the influence of HF(1% ~10%) on Si3N4?(Dangling bonds, adsorbed
states)
2)Is HF dipping necessary for this bonding? How to do that?

Thank you very much in advance. Any other suggestion is appreciated.

Ole Sondergard Posted: Apr 16 2004, 02:05 PM Report this post · Quote

Unregistered

I don´t think that HF is nessesary. I would instead use a Pirahna dip
(3:1 conc. sulfuric acid : 30% hydrogenperoxide) 10 min or so. This
creates a lot of OH on the surfaces, and they makes a rater strong
prebonding when the wafers are put together, even at room temperature.
But remember the wafers have to be absolutely particle free before
bonding to yield an acceptable result, and this can be a real challenge.

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