My thinking is that if you divide the radiation-deposited energy by the amount of energy required to break a bond, it would give (to some order) the number of bonds broken. For example, if the bond energy is 4 eV (a typical number) and 20 eV of energy is deposited (and we assume not converted to heat), roughly 5 bonds are broken. These bonds would not be simultaneously broken, and are probably on the order of a nanometer apart.

This type of calculation should be relevant for a variety of semiconductor processes (like lithography, etching, implantation).