1. Toshiba will be releasing 16 nm NAND flash in 2012 (it's at 32 nm today, 2X nm late next year)
2. EUV still not ready at 2012. They are already suggesting something like 2013 at best.
3. So they can't use double patterning either, they have to use nanoimprint (to replicate an e-beam pattern) or a second round of double patterning. I think it will be round 2.

Maybe insert QP as bridge from DP to EUV?

The whaaa? Ok, Mr. 20-years-ahead-of-the-world. Be depressed. It is depressing. But whining is not going to make it go any faster. Capish?

Phys. Rev. Lett. 97, 196101 (2006) [4 pages]
Ring of C60 Polymers Formed by Electron or Hole Injection from a Scanning Tunneling Microscope Tip

Carrier (electron or hole) injection from a scanning tunneling microscope tip causes various surface modifications on the molecular scale. We report that injection into C60 close-packed layers forms a ring-shaped distribution of C60 polymers. This can be explained on the basis of the radial propagation and energy dissipation of carriers. Subsequent electron or hole injections enlarge the ring, showing that both carriers can induce both polymerization and depolymerization. Furthermore, we demonstrate visualization of carrier scattering by injecting carriers into C60 layers with grain boundaries.

Read and weep: 3X nm diameter.

Indeed, I think QP should be pretty final.